THE PERMEABLE JUNCTION BASE TRANSISTOR WITH A NEW GATE OF EXTREMELY HIGH DOPED P++-GAAS

被引：3

作者：

GRABER, J

KAMP, M

MORSCH, G

MEYER, R

HARDTDEGEN, H

LUTH, H

机构：

[1] Institut für Schicht-, Ionentechnik (ISI) Forschungszentrum Jülich GmbH, D-5170 Jülich

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90407-I

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Permeable Junction Base Transistor (PJBT) is a new concept of vertical field effect transistor (v-FET) that has the potential of very high frequency operation. The gate of the new homoepitaxial device consists of heavily p-type doped GaAs and is embedded in nominally undoped layers to reduce the gate capacitance. Design and technology are described and preliminary results are presented.

引用

页码：131 / 134

页数：4