GROWTH OF INN THIN-FILMS BY HYDRIDE VAPOR-PHASE EPITAXY

被引：26

作者：

SATO, Y

SATO, S

机构：

[1] Department of Electrical and Electronic Engineering, Mining College, Akita University, Akita, 010, 1-1, Tegatagakuen-cho

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 144卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90004-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin film growth of InN, which is a less-studied III-V compound semiconductor because of the difficulty of crystal growth, is performed by hydride vapor phase epitaxy using InCl and NH3 for the first time. InN films grow at the growth temperature above 455 degrees C, and a marked tendency for film decomposition is observed at the temperature of 530 degrees C. The V/III ratios of supplied raw materials are within the range of about 500 to 2000. Surface morphology, crystallinity and electrical properties of the obtained films are measured and discussed.

引用

页码：15 / 19

页数：5

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