1/F NOISE SOURCES

被引：821

作者：

HOOGE, FN

机构：

[1] Department of Electrical Engineering, Eindhoven University of Technology

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 11期

关键词：

D O I：

10.1109/16.333808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an alpha value with a magnitude in the order of 10(-4). Damaging the crystal has a strong influence on alpha, alpha may increase by orders of magnitude. Some theoretical models are briefly discussed; none of them can explain all experimental results. The alpha values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices.

引用

页码：1926 / 1935

页数：10

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