INFLUENCE OF RECOMBINATION CENTERS ON THE ELECTRICAL PERFORMANCE OF SILICON POWER RECTIFIERS

被引：2

作者：

DERDOURI, M

MUNOZYAGUE, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 12期

关键词：

D O I：

10.1051/rphysap:019780013012072900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：729 / 732

页数：4

共 11 条

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[5]

DERDOURI M, 1978, THESIS U P SABATIER

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[7]

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[8]

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[9] ELECTRON-IRRADIATION INDUCED RECOMBINATION CENTERS IN SILICON-MINORITY CARRIER LIFETIME CONTROL [J].

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[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

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