ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156

[3] LEHENY RF, 1979, ELECTRON LETT, V15, P650

[4] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47

[5] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1310 - 1317

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1980, 16 (04) : 155 - 156

[3] LEHENY RF, 1979, ELECTRON LETT, V15, P650

[4] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47

[5] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1310 - 1317