EFFECTS OF SPACE-CHARGE LAYER WIDENING IN JUNCTION TRANSISTORS

被引：177

作者：

EARLY, JM

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1952年 / 40卷 / 11期

关键词：

D O I：

10.1109/JRPROC.1952.273969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1401 / 1406

页数：6

共 4 条

[1] P-N JUNCTION TRANSISTORS
SHOCKLEY, W
SPARKS, M
TEAL, GK
[J]. PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162
[2] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[3] SOME CIRCUIT PROPERTIES AND APPLICATIONS OF NORMAL-PARA-NORMAL TRANSISTORS
WALLACE, RL
PIETENPOL, WJ
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1951, 39 (07): : 753 - 767
[4] SOME CIRCUIT PROPERTIES AND APPLICATIONS OF N-P-N TRANSISTORS
WALLACE, RL
PIETENPOL, WJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (03): : 530 - 563