INTERFACIAL PROPERTIES OF INALAS/INGAAS HIGFETS AND MIS CAPACITORS

被引:3
作者
LEE, PZ
FAN, C
MEINERS, LG
WIEDER, HH
机构
[1] Dept. of Electr. and Comp. Eng., California Univ., San Diego, San Diego, CA
关键词
D O I
10.1088/0268-1242/5/7/014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The interfacial properties and characteristics of In0.52Al 0.48As/In0.53Ga0.47As MIS capacitors grown on InP substrates by molecular beam epitaxy and of prototype enhancement-mode heterojunction insulated gate field-effect transistors (HIGFETS) were investigated experimentally. The interface state density distribution within the fundamental band gap is less than 1012 cm-2 eV -1 and the DC transistor characteristics are stable, with drain current drift of 2+or-1% for gate voltages between -0.2 and 0.2 V over a time period of 700 s.
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收藏
页码:716 / 720
页数:5
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