INTERFACIAL PROPERTIES OF INALAS/INGAAS HIGFETS AND MIS CAPACITORS

The interfacial properties and characteristics of In0.52Al 0.48As/In0.53Ga0.47As MIS capacitors grown on InP substrates by molecular beam epitaxy and of prototype enhancement-mode heterojunction insulated gate field-effect transistors (HIGFETS) were investigated experimentally. The interface state density distribution within the fundamental band gap is less than 1012 cm-2 eV -1 and the DC transistor characteristics are stable, with drain current drift of 2+or-1% for gate voltages between -0.2 and 0.2 V over a time period of 700 s.