BEAM-FOIL LIFETIME STUDIES OF HIGHLY IONIZED SILICON

被引：61

作者：

TRABERT, E ^{[1
]}

HECKMANN, PH ^{[1
]}

SCHLAGHECK, W ^{[1
]}

BUTTLAR, HV ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,D-4630 BOCHUM,FED REP GER

来源：

PHYSICA SCRIPTA | 1980年 / 21卷 / 01期

关键词：

D O I：

10.1088/0031-8949/21/1/005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：27 / 34

页数：8

共 26 条

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