TRANSIENT THERMOELECTRIC EFFECT IN QUASI-2-DIMENSIONAL ETA-MO4O11 CRYSTAL

被引：10

作者：

SASAKI, M

TAI, GX

INOUE, M

机构：

[1] Department of Materials Science, Faculty of Science, Hiroshima University

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 162卷 / 02期

关键词：

D O I：

10.1002/pssb.2221620228

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dynamic measurements of thermal diffusion of conduction carriers in quasi-two-dimensional eta-Mo4O11 crystals which undergo charge-density-wave transitions are made over the temperature range 12 to 300 K and time range 50 ns to 2 ms using a pulsed laser-induced "transient thermoelectric effect (TTE)" technique. The light-generated TTE voltage decays exponentially with multiple relaxation times tau-i (i = 1 to 5), from which the nature of the Fermi surfaces of both electrons and holes is discussed based on recent tight-binding band calculations.

引用

页码：553 / 557

页数：5

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