Sr2AlTaO6/YBa2Cu3O7 HETEROSTRUCTURES FOR SUPERCONDUCTING DEVICE APPLICATIONS

被引:10
作者
Findikoglu, A. T. [1 ]
Bhattacharya, S. [1 ]
Doughty, C. [1 ]
Pambianchi, M. S. [1 ]
Li, Qi [1 ]
Xi, X. X. [1 ]
Anlage, S. M. [1 ]
Fahey, R. E. [2 ]
Strauss, A. J. [2 ]
Phillips, Julia M. [3 ]
Venkatesan, T. [1 ]
机构
[1] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20740 USA
[2] MIT, Lincoln Lab, Lexington, MA 02173 USA
[3] AT&T Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1109/77.233630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using pulsed laser deposition, we have prepared epitaxial heterostructures of a new insulating perovskite Sr2AlTaO6 (SAT) and the high temperature superconductor YBa2Cu3O7 (YBCO) on LaAlO3 substrates. X-ray rocking curve and Rutherford backscattering channelling measurements on [001] SAT films on [001] LaAlO3 substrates yield full width at half-maximum of < 0.3 degrees and minimum backscattering yield chi(min) of 5 %, respectively, indicating good crystallinity. From capacitance measurements on SAT films, the real part of the relative dielectric constant epsilon(r) is found to be similar to 23 - 30, with similar to 6x10(7) V/m static breakdown electric field. A 100 nm x 10 mu m x 50 mu m YBCO film on SAT shows zero-field critical current density of similar to 1.3x10(6) A/cm(2) at 77 K. Using a dielectric resonator at 24.5 GHz, we have measured the resistive energy dissipation at the surface of a YBCO/SAT/YBCO trilayer, yielding effective surface resistance value of 12 m Omega at 77 K, which is within a factor of four of the value obtained for a single layer YBCO film.
引用
收藏
页码:1425 / 1428
页数:4
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