THEORY ON STM IMAGES OF SI(OO1) SURFACE NEAR DEFECTS

被引：32

作者：

NAKAMURA, Y ^{[1
]}

KAWAI, H ^{[1
]}

NAKAYAMA, M ^{[1
]}

机构：

[1] KYUSHU UNIV, FAC SCI, DEPT PHYS, ROPPONMATSU, FUKUOKA 810, JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.52.8231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the influence of surface defects on the structure of a Si(001) surface by statistical mechanical calculations based on an asymmetric dimer model. Recently, the local influence of surface defects has been identified by the scanning tunneling microscope (STM). The arrangement of images of dimers near the defect is well reproduced both at low and at high temperature in the calculated STM image. We also find that, in a particular configuration of a few defects, the influence of the defects is much wider than the simple sum of isolated defects at low temperatures. This gives a reason why a wide region of symmetric-appearing images was observed in the area with rather low defect density in a low-temperature STM image.

引用

页码：8231 / 8238

页数：8

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