LATTICE DISTORTION EFFECTS ON ELECTRICAL SWITCHING IN EPITAXIAL THIN-FILM NDNIO3

被引：25

作者：

DENATALE, JF

KOBRIN, PH

机构：

[1] Rockwell Science Center, Thousand Oaks

来源：

JOURNAL OF MATERIALS RESEARCH | 1995年 / 10卷 / 12期

关键词：

D O I：

10.1557/JMR.1995.2992

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline thin films of NdNiO3 have been epitaxially grown on the (100) face of single-crystal LaAlO3 substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.

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页码：2992 / 2995

页数：4

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