VALENCE BANDS OF GERMANIUM AND SILICON IN AN EXTERNAL MAGNETIC FIELD

[1] BLOCH F, 1928, Z PHYS, V52, P555, DOI DOI 10.1007/BF01339455

[2] ZEEMAN-TYPE MAGNETO-OPTICAL STUDIES OF INTERBAND TRANSITIONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 113 (01): : 15 - 33

[3] EFFECTIVE MASSES OF HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224

[4] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644

[5] EXPERIMENTAL EVIDENCE FOR CARRIERS WITH NEGATIVE MASS [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (11) : 404 - 407

[6] DOUSMANIS GC, 1958, PHYS REV LETT, V1, P55

[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[8] DUNCAN RC, 1960, B AM PHYS SOC, V5, P177

[9] EVTUHOV V, 1961, THESIS CALIFORNIA I

[10] EVTUHOV V, 1961, 16 CAL I TECHN EL TU

[1] BLOCH F, 1928, Z PHYS, V52, P555, DOI DOI 10.1007/BF01339455

[2] ZEEMAN-TYPE MAGNETO-OPTICAL STUDIES OF INTERBAND TRANSITIONS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 113 (01): : 15 - 33

[3] EFFECTIVE MASSES OF HOLES IN SILICON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 223 - 224

[4] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644

[5] EXPERIMENTAL EVIDENCE FOR CARRIERS WITH NEGATIVE MASS [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (11) : 404 - 407

[6] DOUSMANIS GC, 1958, PHYS REV LETT, V1, P55

[7] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[8] DUNCAN RC, 1960, B AM PHYS SOC, V5, P177

[9] EVTUHOV V, 1961, THESIS CALIFORNIA I

[10] EVTUHOV V, 1961, 16 CAL I TECHN EL TU