RESONANT INTERACTIONS OF OPTICAL PHONONS WITH ACCEPTOR CONTINUUM STATES IN SILICON

被引:68
作者
WATKINS, GD [1 ]
FOWLER, WB [1 ]
机构
[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015
来源
PHYSICAL REVIEW B | 1977年 / 16卷 / 10期
关键词
D O I
10.1103/PhysRevB.16.4524
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4524 / 4529
页数:6
相关论文
共 20 条
[1]   CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].
BALDERES.A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539
[2]   THEORY OF INTERFERENCE DISTORTION OF RAMAN-SCATTERING LINE-SHAPES IN SEMICONDUCTORS [J].
BALKANSKI, M ;
JAIN, KP ;
BESERMAN, R ;
JOUANNE, M .
PHYSICAL REVIEW B, 1975, 12 (10) :4328-4337
[3]   Capture of slow neutrons [J].
Breit, G ;
Wigner, E .
PHYSICAL REVIEW, 1936, 49 (07) :0519-0531
[4]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[5]   EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].
CERDEIRA, F ;
FJELDLY, TA ;
CARDONA, M .
PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745
[6]   RESONANT INTERACTION OF ACCEPTOR STATES WITH OPTICAL PHONONS IN SILICON [J].
CHANDRASEKHAR, HR ;
RAMDAS, AK ;
RODRIGUEZ, S .
PHYSICAL REVIEW B, 1976, 14 (06) :2417-2421
[7]   PHONON-ASSISTED EXCITON TRANSITIONS IN A2B6 SEMICONDUCTORS [J].
DILLINGE.J ;
KONAK, C ;
PROSSER, V ;
SAK, J ;
ZVARA, M .
PHYSICA STATUS SOLIDI, 1968, 29 (02) :707-&
[8]  
Dolling G., 1963, INELASTIC SCATTERING, VII, P37
[9]   EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS [J].
FANO, U .
PHYSICAL REVIEW, 1961, 124 (06) :1866-&
[10]  
Frohlich H., 1950, PHILOS MAG, V41, P221, DOI [10.1080/14786445008521794, DOI 10.1080/14786445008521794]