ON SURFACE RECOMBINATION VELOCITY AND OUTPUT INTENSITY LIMIT OF PULSED SEMICONDUCTOR-LASERS

被引：8

作者：

YOO, JS ^{[1
]}

LEE, HH ^{[1
]}

ZORY, PS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.87924

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Relationships obtained by Kappeler et al. are utilized to assess the effect of facet passivation on the output intensity limit in terms of surface recombination velocity. The results show a trend that the output intensity limit increases in an exponential manner with decreasing recombination velocity once the velocity is reduced by a factor of 2 from that for an unpassivated laser. They also show a trend that the output intensity would not be limited by nonradiative recombination at the facet when the recombination velocity is reduced by a factor of 4.

引用

页码：594 / 596

页数：3

共 6 条

[1] CATASTROPHIC DAMAGE OF ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL [J].