CROSS-SECTIONAL TEM OBSERVATION OF NB/ALOX-AL/NB JUNCTION STRUCTURES

被引：13

作者：

IMAMURA, T

HASUO, S

机构：

[1] Fuiitsu Laboratories Ltd., Atsugi, 243-01

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of microstructure of Nb/AlOx-Al/Nb Josephson junctions by cross-sectional transmission electron microscopy (TEM) yielded much information regarding the junction barrier region. Both thick Nb and several-nm Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al is (111). The 200-nm lower Nb has a wavy surface with approximately 5 nm smoothness, but its surface is planarized by several-nm Al deposited on it. Thus AlOx with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure even just above the AlOx barrier.

引用

页码：3172 / 3175

页数：4

共 9 条

[1] HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].