STATE-OF-THE-ART MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS

被引：3

作者：

FOXON, CT ^{[1
]}

机构：

[1] TECH UNIV EINDHOVEN,DEPT PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

ACTA PHYSICA POLONICA A | 1995年 / 88卷 / 04期

关键词：

D O I：

10.12693/APhysPolA.88.559

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper discusses molecular beam epitaxy with particular emphasis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing ''state of the art'' (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.

引用

页码：559 / 566

页数：8