INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS

被引：62

作者：

JARASIUNAS, K

VAITKUS, J

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 02期

关键词：

D O I：

10.1002/pssa.2210440250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：793 / 800

页数：8

共 26 条

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