PARTIALLY IONIZED BEAM DEPOSITION OF ORIENTED FILMS

被引:19
作者
YAPSIR, AS
YOU, L
LU, TM
MADDEN, M
机构
[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12181
[2] INTEL CORP,SANTA CLARA,CA 95051
关键词
30;
D O I
10.1557/JMR.1989.0343
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:343 / 349
页数:7
相关论文
共 35 条
[1]  
BAI P, 1988, P IEEE VLSI MULTILEV, P382
[2]   EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION [J].
CHOI, CH ;
HARPER, RA ;
YAPSIR, AS ;
LU, TM .
APPLIED PHYSICS LETTERS, 1987, 51 (24) :1992-1994
[3]  
CHOI CH, 1987, MATER RES SOC S P, V93, P267
[4]  
GREENE JE, 1987, SOLID STATE TECHNOL, V30, P115
[5]   CONDENSATION IN FREE JETS - COMPARISON OF RARE-GASES AND METALS [J].
HAGENA, OF .
ZEITSCHRIFT FUR PHYSIK D-ATOMS MOLECULES AND CLUSTERS, 1987, 4 (03) :291-299
[6]  
HARPER JME, 1984, ION BOMBARDMENT MODI, P127
[7]  
HASSAN MA, 1987, J VAC SCI TECHNOL A, V5, P1883
[8]   HETEROGENEOUS FORMATION OF SMALL ALUMINUM CLUSTERS [J].
HAWLEY, JH ;
FICALORA, PJ .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2884-2885
[9]   A MASS-SPECTROMETRIC STUDY OF SMALL ALUMINUM CLUSTERS FORMED BY A SINGLE-STATE FREE-JET EXPANSION [J].
HAWLEY, JH ;
FICALORA, PJ .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :979-980
[10]   EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THE X-RAY MICROSTRUCTURE OF THIN SILVER FILMS [J].
HUANG, TC ;
LIM, G ;
PARMIGIANI, F ;
KAY, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2161-2166