CONDUCTING LANGMUIR-BLODGETT-FILMS OF NEW TETRATHIAFULVALENE DERIVATIVES

被引：17

作者：

BERZINA, TS ^{[1
]}

VOROBYOVA, SL ^{[1
]}

TROITSKY, VI ^{[1
]}

KHODORKOVSKY, VY ^{[1
]}

NEILANDS, OY ^{[1
]}

机构：

[1] RIGAS TECH UNIV,RIGA 226048,LATVIA,USSR

来源：

THIN SOLID FILMS | 1992年 / 210卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90245-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conducting LB films of hexadecylethylenedithiopropylenedithiotetrathiafulvalene and hexadecylethylenedithiooxapropylenedithiotetrathiafulvalene are obtained. The properties of monolayers at the air-water interface and multilayers on the solid substrates are compared with those of hexadecylbis(ethylenedithio)tetrathiafulvalene. The influence of surfactant acceptor additions into the donor matrix on the film quality is studied. The dependences of conductance on the dose of irradiation by electrons are measured. The patterns consisting of insulating lines are drawn in the conducting films with an electron beam.

引用

页码：317 / 319

页数：3

共 9 条

[1] ELECTRIC-FIELD MAPPING IN CONDUCTING LANGMUIR-BLODGETT FILMS [J].