INFRARED ABSORPTION IN N-TYPE SILICON

被引:255
作者
SPITZER, W
FAN, HY
机构
来源
PHYSICAL REVIEW | 1957年 / 108卷 / 02期
关键词
D O I
10.1103/PhysRev.108.268
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:268 / 271
页数:4
相关论文
共 6 条
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[2]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
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CONWELL, EM .
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[3]  
FAN, 1956, PHYS REV, V101, P566
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FAN HY, 1951, S VOLUME READING C
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MORIN, 1954, PHYS REV, V96, P833
[6]   DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].
SPITZER, WG ;
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PHYSICAL REVIEW, 1957, 106 (05) :882-890