HIGH-RESOLUTION X-RAY SPECTROSCOPY WITH SILICON DRIFT DETECTORS AND INTEGRATED ELECTRONICS

被引：25

作者：

BERTUCCIO, G ^{[1
]}

SAMPIETRO, M ^{[1
]}

FAZZI, A ^{[1
]}

机构：

[1] POLITECN MILAN,DIPARTIMENTO INGN NUCL,I-20133 MILAN,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)91228-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The use of silicon drift detectors in high resolution low energy (1-10 keV) X-ray spectroscopy is reviewed. The working principles of the detector are briefly described. The paper discusses different topologies intended to optimize the detector resolution within the considered energy range. The necessity of integrated front-end electronics to take full advantage of the low anode capacitance is highlighted. Electronic devices and circuit configurations suited for integration on the detector are summarized and the best results obtained on test chips are presented.

引用

页码：538 / 542

页数：5

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