GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING

被引：34

作者：

HSIEH, IJ ^{[1
]}

FENG, MS ^{[1
]}

KUO, KT ^{[1
]}

LIN, P ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST MAT SCI & ENGN,HSINCHU,TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 06期

关键词：

D O I：

10.1149/1.2054971

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

ZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern.

引用

页码：1617 / 1621

页数：5

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