ETCHING BEHAVIOR OF IN2O3 GROWN FROM PBO-B2O3

被引：5

作者：

CHASE, AB

TEVIOTDALE, R

机构：

[1] Aerospace Corporation, El Segundo, CA

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.1656826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystals of In2O3 grown from a PbOSingle Bond signB2O3 solution are etched by HNO3 or HNO3Single Bond signHCl solutions. Characteristic etch pits and etch tubes are described. The number of etch pits is found to be related to the growth history of the crystals. The relationship of the etch tubes to crystal growth is discussed. © 1968 The American Institute of Physics.

引用

页码：3574 / +

页数：1

共 6 条

[1] TOPOGRAPHY AND ETCH PATTERNS OF SYNTHETIC QUARTZ [J].