THEORY OF INELASTIC ELECTRON-SURFACE-PLASMON INTERACTIONS IN METAL-SEMICONDUCTOR TUNNEL JUNCTIONS

被引：34

作者：

NGAI, KL

ECONOMOU, EN

COHEN, MH

机构：

[1] James Franck Institute, Department of Physics, University of Chicago, Chicago

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.22.1375

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape. © 1969 The American Physical Society.

引用

页码：1375 / &

共 13 条

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