ANGLE-RESOLVED PHOTOEMISSION-STUDY OF BI2SR2CA1-XYXCU2O8 (X=0.0, 0.2, 0.4, 0.6) SINGLE-CRYSTALS

被引：11

作者：

KUSUNOKI, T ^{[1
]}

TAKAHASHI, T ^{[1
]}

SATO, S ^{[1
]}

KATAYAMAYOSHIDA, H ^{[1
]}

KAMIYA, K ^{[1
]}

INOKUCHI, H ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

PHYSICA C | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91746-Q

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Angle-Resolved photoemission measurements were performed on a series of Bi2Sr2Ca1-xYxCu2O8 (x = 0.0, 0.2, 0.4, and 0.6) single crystals. It was found that hole-doping in an insulator (x = 0.6) produces new electronic states in the charge-transfer gap and the density of new states increases with hole-concentration. In the over-doped region (x = 0.0 and 0.2), a slight rigid shift of bands crossing the Fermi level was observed. This suggests that a rigid-band picture may be recovered in the over-doped region.

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页码：1045 / 1046

页数：2

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