QUANTUM WIRE-LIKE INDUCED MORPHOLOGY IN INGAAS WELLS GROWN ON INYAL1-YAS TENSILE BUFFER LAYERS OVER (100)INP VICINAL SURFACES

被引：22

作者：

PEIRO, F

CORNET, A

MORANTE, JR

GEORGAKILAS, A

WOOD, C

CHRISTOU, A

机构：

[1] FDN RES & TECHNOL HELLAS,IRAKLION,GREECE

[2] UNIV MARYLAND,COLLEGE PK,MD 20742

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113950

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The appearance of quantum wirelike morphology on InGaAs single quantum well structures grown by molecular beam epitaxy on (100)InP vicinal surfaces is reported. The results of transmission electron microscopy reveal that the misorientation of the substrate drives the development of a lateral contrast modulation related to In-rich or Al-rich regions oriented along {133} or {122} planes that initiate on the InAlAs tensile buffer layer and propagate across the structure, giving rise to an anisotropic rippling of the InGaAs well. Conversely, a misfit dislocation network at the InAlAs/InP interface was observed for the same layers grown on exact (100) surface. A comparison of the two structures suggest that the development of such modulated configuration is apparently a strain relieving mechanism.© 1995 American Institute of Physics.

引用

页码：2391 / 2393

页数：3

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