CHANGES IN GAAS ELECTROLUMINESCENT DIODES INDUCED BY CONTINUOUS OPERATION

被引：7

作者：

JACOBUS, WN

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 03期

关键词：

D O I：

10.1016/0038-1101(67)90083-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：260 / +

页数：1

共 9 条

[1] ELECTRICAL PROPERTIES OF GOLD-DOPED DIFFUSED SILICON COMPUTER DIODES [J].

BAKANOWSKI, AE ;

FORSTER, JH .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :87-104

[2] CHARACTERISTICS OF GAAS GUARD-RING DIODES [J].

BIARD, JR ;

LEEZER, JF ;

REED, BS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (11) :537-&

[3]

BIARD JR, 1965, 1965 SOL STAT DEV RE

[4] SPECTRAL RESPONSE OF SOLAR CELLS [J].

DALE, B ;

SMITH, FP .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1377-&

[5]

LANZA C, 1965, 1965 IEEE INT C EL D

[6] ROLE OF DIFFUSION CURRENT IN ELECTROLUMINESCENCE OF GAAS DIODES ( ELECTRON IRRADIATION EFFECTS 78 DEGREES-300 DEGREES K E/T ) [J].

MILLEA, MF ;

AUKERMAN, LW .

APPLIED PHYSICS LETTERS, 1964, 5 (08) :168-+

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[8]

SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9] NARROW BASE GERMANIUM PHOTODIODES [J].

SAWYER, DE ;

REDIKER, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1122-1130

← 1 →