ELECTROABSORPTIVE BEHAVIOR OF SEMICONDUCTOR QUANTUM DOTS IN GLASS

被引：12

作者：

COTTER, D

BURT, MG

GIRDLESTONE, HP

机构：

[1] British Telecom Res. Labs., Ipswich, Martlesham Heath

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 06期

关键词：

D O I：

10.1088/0268-1242/5/6/032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electroabsorptive properties of semiconductor quantum dots in glass are observed for macroscopic field strengths up to 8*105 V cm -1. The quadratic dependence of the induced absorption change on the applied field turns over to a linear dependence at the highest fields, and a tentative explanation for this behaviour is suggested.

引用

页码：631 / 633

页数：3

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