CAS-EU, F THIN-FILM ELECTROLUMINESCENT DEVICES PREPARED BY RF-SPUTTERING WITH HYDROGEN-ARGON MIXTURE GAS

被引：8

作者：

AOZASA, M ^{[1
]}

KATO, K ^{[1
]}

NAKAYAMA, T ^{[1
]}

ANDO, K ^{[1
]}

机构：

[1] OSAKA IND UNIV,FAC ENGN,DEPT ELECT & ELECTR ENGN,DAITO,OSAKA 574,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

Hydrogen-added argon gas; Ilectroluminescent device; Improvement of luminance; Preferential orientation; Rf sputtering; Sputtering gas;

D O I：

10.1143/JJAP.29.1997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaS:Eu, F electroluminescent devices with high luminous characteristics were prepared by rf-magnetron sputtering. The film quality of the active layer was improved by preparation with hydrogen-added argon sputtering gas. The active layer thus prepared has preferential (220) orientation and enhanced columnar structure with reduced incorporated fluorine atoms. The environment around the luminescent center was also affected to some extent by hydrogen addition to the argon sputtering gas. A device with the luminance of 250 cd/m2and the luminous efficiency of 0.2 lm/W at a 1 kHz sine wave operation was prepared. © 1990 IOP Publishing Ltd.

引用

页码：1997 / 2002

页数：6

共 9 条

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[2]

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[3]

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[4]

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MIKAMI, A ;

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[9]

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