VPE GROWTH OF INGAP-INGAAS STRUCTURES FOR TRANSFERRED-ELECTRON PHOTO-CATHODES

被引：7

作者：

SAXENA, RR

HYDER, SB

GREGORY, PE

ESCHER, JS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 03期

关键词：

D O I：

10.1149/1.2129741

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：733 / 737

页数：5

共 19 条

[1]

BAN VS, 1973, CHEM VAPOR DEPOSITIO, P31

[2]

BAN VS, 1973, J PHYS CHEM SOLIDS, V34, P1119

[3] TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].

BELL, RL ;

JAMES, LW ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646

[4]

ENSTROM RE, 1970, 3RD P INT S GALL ARS

[5]

ENSTROM RE, 1973, GALLIUM ARSENIDE REL, P37

[6]

ERMAKOV ON, 1977, SOV PHYS SEMICOND+, V11, P651

[7] HIGH-QUANTUM-EFFICIENCY PHOTOEMISSION FROM AN INGAASP PHOTOCATHODE [J].

ESCHER, JS ;

ANTYPAS, GA ;

EDGECUMBE, J .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :153-155

[8]

ESCHER JS, 1978, AFA1TR7878 AIR FORC

[9] EFFECT OF GAS-PHASE STOICHIOMETRY ON MINORITY-CARRIER DIFFUSION LENGTH IN VAPOR-GROWN GAAS [J].

ETTENBERG, M ;

OLSEN, GH ;

NUESE, CJ .

APPLIED PHYSICS LETTERS, 1976, 29 (03) :141-142

[10] THIN-FILM EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS [J].

HYDER, SB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1503-1508

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