共 11 条
[1]
NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND
[J].
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS,
1971, 4 (13)
:1789-&
[2]
PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1990, 29 (05)
:824-827
[4]
GIDENBLAT GS, 1990, MATER RES B, V25, P129
[5]
NISHIMURA K, 1989, P NATO ADV RES WORKS
[6]
SYNTHESIS OF DIAMOND THIN-FILMS HAVING SEMICONDUCTIVE PROPERTIES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1988, 27 (02)
:L173-L175
[7]
PHELPS AW, 1989, 1ST P INT S DIAM DIA, V12, P38
[8]
VOLUME EXPANSION OF DIAMOND DURING ION-IMPLANTATION
[J].
PHYSICAL REVIEW B,
1986, 34 (12)
:8870-8874