IV CHARACTERISTICS OF 1D-0D-1D DOUBLE-BARRIER STRUCTURES AND PERSISTENCE OF FINE-STRUCTURE AT HIGH-TEMPERATURES

A theoretical investigation of coupled quantum-wire-quantum-dot-quantum-wire resonant-tunneling diodes is presented, with particular emphasis on the basic mechanisms producing the fine structure in the current-voltage characteristics. The possibility of having two different types of fine structure is remarked upon, and an explanation is proposed for the relative lack of thermal smearing observed in certain devices that could be important for the use of low-dimensional devices at high temperatures. The I-V curves are calculated numerically for two typical structures and very good agreement with experiments is obtained.