DEPHASING TIME AND ONE-DIMENSIONAL LOCALIZATION OF TWO-DIMENSIONAL ELECTRONS IN GAAS/ALXGA1-XAS HETEROSTRUCTURES

被引：96

作者：

CHOI, KK

TSUI, DC

ALAVI, K

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

[2] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.36.7751

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7751 / 7754

页数：4

共 21 条

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[7] ELECTRON-ELECTRON INTERACTIONS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
CHOI, KK
TSUI, DC
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[8] EXPERIMENTAL-DETERMINATION OF THE EDGE DEPLETION WIDTH OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GAAS/ALXGA1-XAS
CHOI, KK
TSUI, DC
ALAVI, K
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 110 - 112
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[10] A NOTE ON INELASTIC-SCATTERING TIME IN 2-DIMENSIONAL WEAKLY LOCALIZED REGIME
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