共 13 条
- [2] KILLORAN N, 1980, P INT C SI III-V MAT
- [3] PHOTOLUMINESCENCE FROM DEEP CENTERS IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (06) : 521 - 524
- [4] EPR OF CR2+(3D4) IN GALLIUM-ARSENIDE - JAHN-TELLER DISTORTION AND PHOTOINDUCED CHARGE CONVERSION [J]. PHYSICAL REVIEW B, 1977, 16 (03): : 971 - 973
- [5] FINE-STRUCTURE IN CATHODOLUMINESCENCE SPECTRUM FROM CHROMIUM-DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (09): : L405 - L409
- [6] LIGHTOWLERS EC, 1978, PHYSICS SEMICONDUCTO, P307
- [7] LOWTHER JE, COMMUNICATION
- [8] PHOTOLUMINESCENCE OF CR ACCEPTOR IN BOAT-GROWN AND LPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2450 - 2451
- [9] STOCKER HJ, 1976, P INT C PHYS SEMICON, P611
- [10] Infrared absorption in some II-VI compounds doped with Cr [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (11): : 4313 - 4333