PRE-THRESHOLD CONDUCTANCE AND POLARIZATION EFFECTS IN AMORPHOUS SEMICONDUCTOR SWITCHES

被引：8

作者：

BURGESS, WD

HEENISCH, HK

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1016/0038-1101(73)90120-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：15 / &

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[5] MECHANISM OF OVONIC THRESHOLD SWITCHING [J].

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PRYOR, RW .

OVSHINSKY, SR .

[7]

Pryor R., 1972, J NONCRYSTALLINE SOL, V7, P181, DOI DOI 10.1016/0022-3093(72)90288-8

[8] MECHANISM OF THRESHOLD SWITCHING [J].

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[9]

PRYOR RW, PERSONAL COMMUNICATI

[10]

VANROOSBROECK W, 1972, MAR ATL CIT M AM PHY