EPITAXIAL-GROWTH STUDY OF (BA1-XRBX)BIO3-DELTA FILMS BY ION-BEAM SPUTTERING

被引：3

作者：

FUJITA, J ^{[1
]}

YOSHITAKE, T ^{[1
]}

SATOH, T ^{[1
]}

IGARASHI, H ^{[1
]}

TAKEUCHI, I ^{[1
]}

MIURA, S ^{[1
]}

TSAI, JS ^{[1
]}

TSUGE, H ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA 305,JAPAN

来源：

PHYSICA C | 1991年 / 185卷 / pt 3期

关键词：

D O I：

10.1016/0921-4534(91)91114-J

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of (Ba1-xRbx)BiO3-delta films was studied. Oxygen deficient atmosphere was appropriate for the epitaxial growth, while the effective oxidation by atomic oxygen during cooling down process was require in order to obtain the as-grown superconductivity. Typical Tc,zero of the film was about 10K. The films had very smooth surface and the in-plane epitaxial relationship was < 100 > BRB parallel-to < 110 > SrTiO3.

引用

页码：1979 / 1980

页数：2

共 6 条

[1]

FUJITA J, 1990, APPL PHYS LETT, V58, P1092

[2]

FUJITA J, 1989, APPL PHYS LETT, V54, P295

[3] MOLECULAR-BEAM EPITAXY OF SUPERCONDUCTING (RB,BA)BIO3 [J].