VIBRATIONAL EXCITATIONS IN A-SI-F AND A-SI-(F,H) ALLOYS

[1] GESI ALLOYS - A STUDY OF SHORT-RANGE ORDER [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6294 - 6301

[2] AGRAWAL BK, 1978, PHYS REV B, V18, P7189, DOI 10.1103/PhysRevB.18.7189.3

[3] INFRARED-ABSORPTION AND 1ST-ORDER RAMAN-SCATTERING DUE TO SINGLE AND PAIRED IMPURITY ATOMS IN DILUTE GE-SI ALLOYS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 5277 - 5283

[4] IMPURITY MODES DUE TO A SINGLE AND A PAIR OF DEFECTS IN GERMANIUM [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1751 - 1761

[5] AGRAWAL BM, UNPUBLISHED

[6] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[7] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106

[8] AMORPHOUS SI-F-H SOLAR-CELLS PREPARED BY DC GLOW-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 599 - 601

[9] LEY L, 1980, PHYS REV B, V15, P6140

[10] LEY L, 1980, 15TH P INT C PHYS SE

[1] GESI ALLOYS - A STUDY OF SHORT-RANGE ORDER [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6294 - 6301

[2] AGRAWAL BK, 1978, PHYS REV B, V18, P7189, DOI 10.1103/PhysRevB.18.7189.3

[3] INFRARED-ABSORPTION AND 1ST-ORDER RAMAN-SCATTERING DUE TO SINGLE AND PAIRED IMPURITY ATOMS IN DILUTE GE-SI ALLOYS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 5277 - 5283

[4] IMPURITY MODES DUE TO A SINGLE AND A PAIR OF DEFECTS IN GERMANIUM [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1751 - 1761

[5] AGRAWAL BM, UNPUBLISHED

[6] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[7] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106

[8] AMORPHOUS SI-F-H SOLAR-CELLS PREPARED BY DC GLOW-DISCHARGE [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 599 - 601

[9] LEY L, 1980, PHYS REV B, V15, P6140

[10] LEY L, 1980, 15TH P INT C PHYS SE