LOW-FREQUENCY NOISE CHARACTERISTICS OF LIGHTLY-DOPED-DRAIN MOSFETS

被引：4

作者：

JANG, SL

CHANG, PC

机构：

[1] Department of Electronic Engineering, 43 Keelung Road, Section 4, National Taiwan Institute of Technology, Taipei 10772, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 07期

关键词：

D O I：

10.1016/0038-1101(93)90118-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The noise in lightly doped drain-source (LDD) MOSFETs with channel length of 0.9 mum has been measured from 10 Hz to 100 kHz. The devices were operating in the linear region at strong inversion. Generation-recombination (GR) noise and 1/f noise have been found. An analytical GR model, by which the GR noise can be calculated from external voltages without computer iteration, has been developed. The field dependent mobility is accounted for. It is assumed that the GR noise is due to the emission and capture of carriers in the space-charge region in the bulk channel junction. The noise power increases with increasing drain voltage or decreases with decreasing gate voltage.

引用

页码：1007 / 1010

页数：4

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