THE ROLE OF LATTICE MATCHING IN IMPROVING THE PERFORMANCE OF PBSNTE IR PHOTO-DIODES

被引：8

作者：

ROTTER, S ^{[1
]}

KASEMSET, D ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT, CTR MAT SCI & ENGN, CAMBRIDGE, MA 02139 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 03期

关键词：

D O I：

10.1109/EDL.1982.25481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：66 / 68

页数：3

共 14 条

[1] ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS [J].

ANDERSON, WW .

INFRARED PHYSICS, 1980, 20 (06) :363-372

[2] PERFORMANCE OF PBSNTE DIODES AT MODERATELY REDUCED BACKGROUNDS [J].

CHIA, PS ;

BALON, JR ;

LOCKWOOD, AH ;

RANDALL, DM ;

RENDA, FJ ;

DEVAUX, LH ;

KIMURA, H .

INFRARED PHYSICS, 1975, 15 (04) :279-285

[3]

ENGER D, 1981, J APPL PHYS, V52, P490

[4]

FEIT Z, 1981, UNPUB 4TH P INT C PH

[5] PB1-XSNXTE-PBTE1-YSEY LATTICE-MATCHED BURIED HETEROSTRUCTURE LASERS WITH CW SINGLE-MODE OUTPUT [J].

KASEMSET, D ;

ROTTER, S ;

FONSTAD, CG .

ELECTRON DEVICE LETTERS, 1980, 1 (05) :75-78

[6]

KASEMSET D, 1981, J ELEC MAT, V10

[7]

KASEMSET D, 1979, INT ELECTRON DEVICES, P130

[8]

KOSOGOV OV, 1977, SOV PHYS SEMICOND+, V11, P1113

[9]

STAFEEV VI, 1978, SOV PHYS SEMICOND+, V12, P1015

[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P663

← 1 2 →