TRAPPING IN DEFECT STATES AS A SOURCE OF PULSE HEIGHT DEFECT IN SILICON SURFACE BARRIER DETECTORS

被引：8

作者：

EISLER, PL

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1967年 / 48卷 / 01期

关键词：

D O I：

10.1016/0029-554X(67)90468-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：103 / &

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[6]

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