ENHANCEMENT OF THE FREE CARRIER DENSITY IN GA1-XALXAS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY UNDER HIGH-TEMPERATURE GROWTH-CONDITIONS

被引：5

作者：

BASMAJI, P

GUITTARD, M

GIBART, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 100卷 / 01期

关键词：

D O I：

10.1002/pssa.2211000154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K41 / K45

页数：5

共 10 条

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[7] Pantelides S. T., 1986, DEEP CTR SEMICONDUCT, P489
[8] SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY
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