SYNTHESIS OF GAAS BY MOLTEN-SALT ELECTROLYSIS

被引:17
作者
DEMATTEI, RC
ELWELL, D
FEIGELSON, RS
机构
[1] Center for Materials Research, Stanford University, Stanford
基金
美国国家科学基金会;
关键词
D O I
10.1016/0022-0248(78)90055-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Molten salt electrodeposition of gallium arsenide is reported the first time. Deposition occurred at 720-760°C, from a molten solution containing NaAsO2 and Ga2O3 in a B2O3-NaF solvent. © 1978.
引用
收藏
页码:643 / 644
页数:2
相关论文
共 5 条
[1]   SYNTHESIS AND EPITAXIAL GROWTH OF GAP BY FUSED SALT ELECTROLYSIS [J].
CUOMO, JJ ;
GAMBINO, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :755-&
[2]  
DEMATTEI RC, 1977, 5TH INT C CRYST GROW
[3]  
WEISS G, 1946, ANN CHIM, V1, P446
[4]   EPITAXIAL-GROWTH OF ZNSE ON GE BY FUSED SALT ELECTROLYSIS [J].
YAMAMOTO, A ;
YAMAGUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (04) :561-562
[5]   GROWTH OF LANTHANUM HEXABORIDE SINGLE-CRYSTALS BY MOLTEN-SALT ELECTROLYSIS [J].
ZUBECK, IV ;
FEIGELSON, RS ;
HUGGINS, RA ;
PETTIT, PA .
JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) :85-91