INTERACTION BETWEEN INDIUM ATOMS AND VACANCIES IN DILUTE ALUMINIUM-INDIUM ALLOYS

The effect of very small additions of indium on the decay of quenched-in vacancies at 0°c in aluminium is studied by high precision electrical resistivity measurements. The extent of the observed resistivity decrease in the alloy on ageing with respect to that in pure aluminium is used as a measure of the strength of binding between indium atoms and vacancies. Good agreement between the values for -BIn-v (0·18 ± 0·01 ev), is obtained in the solute concentration range where the Lomer expression can be used with confidence. A further value of BIn-v (0·17(4) ev) is deduced from electron micrographs of the dislocation loop structure in material that had been quenched and then aged at room temperature. It is suggested that all values bo regarded as a minimum, and that the true magnitude of BIn-v lies in the range 0·18-0·21 ev. The discrepancy between this and previous values presented in the literature is discussed. © 1969 Taylor & Francis Group, LLC.