MICROSTRUCTURE OF THE HIGH T(C) PHASE (T(C)-APPROXIMATELY-111-K) IN THE SB-PB-BI-SR-CA-CU-O SYSTEM

被引：16

作者：

KIJIMA, N

GRONSKY, R

ENDO, H

OGURI, Y

MCKERNAN, SK

ZETTL, A

机构：

[1] MITSUBISHI KASEI CORP,RES CTR,MIDORI KU,YOKOHAMA 227,JAPAN

[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.104944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure of the high T(c) phase (T(c) approximately 111 K) in the Sb-Pb-Bi-Sr-Ca-Cu-O system has been determined using transmission electron microscopy. Its crystal structure belongs to the superspace group N111(Bb2b), N111(Bbmb) or P111(Bb2b) with subcell lattice parameters a = 5.411 (1) angstrom, b = 5.411 (1) angstrom, and c = 37.22 (6) angstrom. The high T(c) phase has a modulated structure with b-axis wavelengths 26.9 and 36.1 angstrom. Stacking faults along the c axis in the high T(c) phase are much less numerous than in the Bi-Sr-Ca-Cu-O system, but comparable to the Pb-Bi-Sr-Ca-Cu-O system. Sb substitution for Ca may effect the internal strain of the crystal.

引用

页码：188 / 190

页数：3

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