ELECTRON-SCATTERING EFFECTS IN ADDITIVE PATTERNING OF XRL MASKS FOR 0.2 MICRON RESOLUTION

被引：3

作者：

CARCENAC, F

HAGHIRIGOSNET, AM

MESSINA, G

PAOLETTI, A

ROUSSEAUX, F

SANTANGELO, S

TUCCIARONE, A

机构：

[1] L2M / CNRS, 92220 Bagneux

[2] Fac. Ingegneria dell' Universita', 89100 Reggio Calabria

[3] Dpt. Ingegneria Meccanica, Universita' Roma 2, 00173 Roma

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90076-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a three-layer system for additive patterning on silicon substrates is discussed with reference to the effects of electron beam scattering and in view of 0.2-mu-m resolution. The results of Monte Carlo simulations are fed into proximity-function and resist development calculations and compared with experimental test patterns. The variables investigated are resist thickness and electron energy.

引用

页码：197 / 200

页数：4