LASER GAIN AND CURRENT-DENSITY IN A DISORDERED ALGAAS/GAAS QUANTUM-WELL

被引：18

作者：

LI, EH ^{[1
]}

CHAN, KS ^{[1
]}

机构：

[1] CITY POLYTECH HONG KONG,DEPT PHYS & MAT SCI,KOWLOON,HONG KONG

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 14期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19930824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The laser gain and current density at room temperature are analysed for disordered (interdiffusion induced) Al0.3Ga0.7As/GaAs single quantum well structures at a carrier injection level of 4 x 10(12) cm-2. The results show that both the peak gain and current density remain about the same strength during the initial stages of disordering, and provide a bandwidth of 55 nm.

引用

页码：1233 / 1234

页数：2

共 7 条

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