ELECTRICAL AND OPTICAL CHARACTERIZATION OF POLY(PHENYLENE-VINYLENE) LIGHT-EMITTING-DIODES

被引：139

作者：

KARG, S ^{[1
]}

RIESS, W ^{[1
]}

DYAKONOV, V ^{[1
]}

SCHWOERER, M ^{[1
]}

机构：

[1] UNIV BAYREUTH,BAYREUTHER INST MAKROMOLEK FORSCH,W-8580 BAYREUTH,GERMANY

来源：

SYNTHETIC METALS | 1993年 / 54卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(93)91088-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electrical and optical properties of poly(p-phenylene-vinylene and light emitting devices based on this polymer. At room temperature these devices can be well described by a Schottky diode configuration. Dark I-V characteristics reveal a good diode behaviour with a maximum rectification ratio of 10(6). White light illumination yields an open-circuit voltage of more than I-V and a power conversion efficiency of about 0.1%, suggesting the possible application as solar cells. Complex impedance gives information about acceptor dopant concentration, diffusion voltage and depletion width. At low temperatures the I-V characteristics become symmetrical and electroluminescence appears in both current directions, indicating that the Schottky junction is not necessary for the observation of electroluminescence in conjugated polymers.

引用

页码：427 / 433

页数：7

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