ENHANCEMENT OF DEFECT-INDUCED RAMAN MODES AT THE FUNDAMENTAL ABSORPTION-EDGE OF ELECTRON-IRRADIATED GAAS

被引：11

作者：

BERG, RS

YU, PY

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.33.7349

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7349 / 7352

页数：4

相关论文

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