DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/CM2

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1545

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[3] [Anonymous], 1969, FIZ TEKHNIKA POLUPRO

[4] GAAS JUNCTION LASERS CONTAINING AMPHOTERIC DOPANTS GE AND SI [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 199 - &

[5] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[6] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[7] HWANG CJ, 1969, IEEE SEMICONDUCTOR L

[8] ILEGEMS M, 1968, 2 P INT S GALL ARS

[9] KRESSEL H, 1969, RCA REV, V30, P106

[10] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1545

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[3] [Anonymous], 1969, FIZ TEKHNIKA POLUPRO

[4] GAAS JUNCTION LASERS CONTAINING AMPHOTERIC DOPANTS GE AND SI [J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 199 - &

[5] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[6] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211

[7] HWANG CJ, 1969, IEEE SEMICONDUCTOR L

[8] ILEGEMS M, 1968, 2 P INT S GALL ARS

[9] KRESSEL H, 1969, RCA REV, V30, P106

[10] PROPERTIES OF EFFICIENT SILICON-COMPENSATED ALXGA1-XAS ELECTROLUMINESCENT DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2248 - &